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  Datasheet File OCR Text:
 Semiconductor
STB772
PNP Silicon Transistor
Description
* * * * Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STD882 Switching Application
Ordering Information
Type NO. STB772 Marking STB772 Package Code MPT
Outline Dimensions
unit : mm
6.50.2
21.51.0
1.10.1
1.2 Max. 0.70 Max. 0.4~0.6
1
2
3
2.50.1. 5.00.2
3.40.2
2.00.1
0.50.2
12.5 Min.
8.50.2
PIN Connections 1. Emitter 2. Collector 3. Base
KST-B015-001
1
STB772
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-15 -12 -5 -5 1.2 150 -55~150
Unit
V V V A W C C
* : When mounted on 40x40x0.8mm ceramic substate
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat1) VBE(sat) fT Cob
Test Condition
IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-12V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-3A IC=-3A, IB=-150mA IC=-3A, IB=-150mA VCB=-5V, IC=-500mA VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-15 -12 -5 160 40 150 -1 -1 320 -0.5 -1.2 50
Unit
V V V A A V V MHz pF
KST-B015-001
2
STB772
Electrical Characteristic Curves
Fig. 1 Pc - Ta Fig. 2 Ic - VBE
Fig. 3 hFE - IC
Fig. 4 VCE(sat) - IC
KST-B015-001
3


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